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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2004.09.17 Page No. : 1/4
BTA1952J3
Features
* Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A * Excellent DC current gain characteristics * Wide SOA * Complementary to BTC5103J3
Symbol
BTA1952J3
Outline
TO-252
BBase CCollector EEmitter
BCE
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Note : *1. Single Pulse Pw=10ms
Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25) Pd(TC=25) Tj Tstg
Limits -100 -80 -5 -5 -10 1 10 150 -55~+150
Unit V V V *1 A W C C
BTA1952J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 fT Min. -100 -80 -5 100 120 Typ. -0.3 120 Max. -10 -10 -1.0 -1.5 390 Unit V V V A A V V MHz
Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2004.09.17 Page No. : 2/4
Test Conditions IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-3V, IC=-0.5A VCE=-2V, IC=-1A VCE=-5V, IC=-500mA, f=30MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Classification of hFE 2
Rank Range Q 120~270 R 180~390
BTA1952J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 Saturation Voltage---(mV)
VCE=4V
Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2004.09.17 Page No. : 3/4
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
Current Gain---HFE
100
10
100 1 10 100 1000 Collector Current---IC(mA) 10000
1 1 10 100 1000 Collector Current---IC(mA) 10000
On Voltage vs Collector Current
10000 Power Dissipation---PD(W)
VBE(on)@VCE=4V
Power Derating Curve
1.2 1 0.8 0.6 0.4 0.2 0
On Voltage---(mV)
1000
100 0.1 1 10 100 1000 Collector Current---IC(mA) 10000
0
50 100 150 Ambient Temperature---TA()
200
Power Derating Curve
12 Power Dissipation---PD(W) 10 8 6 4 2 0 0 50 100 150 Case Temperature---TC() 200
BTA1952J3
CYStek Product Specification
CYStech Electronics Corp.
TO-252 Dimension
A C
Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2004.09.17 Page No. : 4/4
Marking:
B L F G
D
A1952
3 H E K 2 I 1 J
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283
Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80
DIM G H I J K L
Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630
Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1952J3
CYStek Product Specification

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